Investigations in Gallium Removal (ANRCP-1997-3)

نویسندگان

  • C. V. Philip
  • W. W. Pitt
  • Carl Beard
چکیده

Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A&M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700 900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated. Background The scope of DOE’s integrated approach for weapons component conversions includes two options for plutonium disposition: (1) immobilization via vitrification/ceramification, or (2) use of the plutonium for fabrication of mixed uranium/plutonium oxide (MOX) fuel for commercial nuclear power reactors. However, weapons-derived plutonium contains approximately 1 weight percent gallium. Gallium at such concentrations presents various issues for MOX fuel fabrication and use. MOX fuel is a ceramic material, prepared by sintering oxides of uranium and plutonium, which are initially both in the form of fine powders. At high concentrations, gallium affects the sintering behavior of the ceramic. Since plutonium weapon components do not all have the same concentration of gallium, the sintering process parameters would have to be adjusted as the gallium concentration changed (undesirable in an industrial-scale operation) unless the gallium was reduced to an acceptable level prior to fabrication. In addition, there may be issues with using MOX fuel with excessive gallium concentration as a reactor

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Gallium Interactions with Zircaloy (ANRCP-1999-2)

High fluence ion implantation of Ga ions was conducted on heated Zircaloy-4 in the range of 10-10 Ga ions/cm2. Surface effects were studied using SEM and electron microprobe analysis. The depth profile of Ga in the Zircaloy was characterized with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluence of 10 Ga ions/cm. After implantatio...

متن کامل

Theoretical study of sequential oxidation of clusters of gallium oxide : Ga 3 O n ( n : 4 – 8 )

We report the results of a theoretical study of sequential oxidation of gallium oxide clusters from Ga3O4 to Ga3O8. These results, based on density functional theory calculations, find the ground state of the neutral clusters to be in the lowest spin state with nearly the same binding energy of 3.5 eV per atom. Electron affinity, ionization potential and HOMO–LUMO gap values of these oxygen-ric...

متن کامل

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

متن کامل

Quantum confinement effects in gallium nitride nanostructures: ab initio investigations.

We present ab initio density functional investigations of the atomic and electronic structure of gallium nitride nanodots and nanowires. With increasing diameter, the average Ga-N bond length in the nanostructures increases, as does the relative stability (heat of formation), approaching the values for bulk GaN. As the diameter decreases, the band gap increases, with the variation for the nanod...

متن کامل

Gallium self-diffusion in gallium phosphide

Ga self-diffusion in gallium phosphide ~GaP! is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy ~SIMS! is used to monitor intermixing of Ga and Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy ~MBE! on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D52.0 cm s exp(24.5 eV/...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997